HIP4086AABZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 24SOIC
$6.84
Available to order
Reference Price (USD)
1+
$6.25000
10+
$5.61700
30+
$5.31000
120+
$4.60200
270+
$4.36600
510+
$3.91761
1,020+
$3.30400
2,520+
$3.13880
Exquisite packaging
Discount
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Renesas Electronics America Inc presents the HIP4086AABZ as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7V ~ 15V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 95 V
- Rise / Fall Time (Typ): 20ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 24-SOIC
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