HIP6601BECBZA-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
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Renesas Electronics America Inc's HIP6601BECBZA-T establishes new standards for automotive PMIC - Gate Driver ICs with ASIL-D functional safety certification. This IC classification incorporates: 1) Redundant fault detection circuits, 2) On-chip LDO for auxiliary power, and 3) ISO 26262-compliant failure modes. Automotive applications range from 48V mild-hybrid BSG systems to steer-by-wire and brake-by-wire architectures. Benchmark tests show the HIP6601BECBZA-T reducing ECU wake-up time by 200ms in Volkswagen's MEB platform, while preventing latch-up during load-dump transients up to 45V. The driver also enables <1 A standby current for always-on ADAS modules.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 15 V
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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