HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A ES6
$0.06
Available to order
Reference Price (USD)
4,000+
$0.06038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your BOM with the HN1A01FE-GR,LF by Toshiba Semiconductor and Storage, a cost-effective BJT Array without compromising quality. This general-purpose Discrete Semiconductor Product suits universal motor controls, lighting dimmers, and security system triggers. Educational institutions and prototyping labs favor its breadboard-friendly pinout. The HN1A01FE-GR,LF includes built-in reverse polarity protection, safeguarding circuits during accidental miswiring in field installations.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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