HN1B04FU-GR,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + NPN TR VCEO:-50
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
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Engineered for reliability, the HN1B04FU-GR,LXHF BJT Array from Toshiba Semiconductor and Storage delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The HN1B04FU-GR,LXHF shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 150MHz, 120MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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