HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 120V 0.1A SM6
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The HN3A51F(TE85L,F) from Toshiba Semiconductor and Storage sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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