HN4B102J(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR SMV MOQ=30
$0.24
Available to order
Reference Price (USD)
1+
$0.24131
500+
$0.2388969
1000+
$0.2364838
1500+
$0.2340707
2000+
$0.2316576
2500+
$0.2292445
Exquisite packaging
Discount
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The HN4B102J(TE85L,F) from Toshiba Semiconductor and Storage sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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