HP8K22TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH MID POWER MOSFET
$1.43
Available to order
Reference Price (USD)
2,500+
$0.47740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the HP8K22TB from Rohm Semiconductor, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the HP8K22TB ensures top-notch performance. Rohm Semiconductor's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A, 57A
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
- Power - Max: 25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
Related Products
Infineon Technologies
IRF7530TRPBF
Panjit International Inc.
PJL9824_R2_00001
Infineon Technologies
IPG20N04S4L07AATMA1
onsemi
EMH2418R-TL-H
onsemi
EFC4618R-P-TR
Renesas Electronics America Inc
FX50KMJ-06#B00
Vishay Siliconix
SI3993CDV-T1-GE3
Infineon Technologies
IRF9358TRPBF
Diodes Incorporated
DMTH4007SPD-13
Nexperia USA Inc.