HP8M51TB1
Rohm Semiconductor
Rohm Semiconductor
HP8M51TB1 IS LOW ON-RESISTANCE A
$2.43
Available to order
Reference Price (USD)
1+
$2.43000
500+
$2.4057
1000+
$2.3814
1500+
$2.3571
2000+
$2.3328
2500+
$2.3085
Exquisite packaging
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The HP8M51TB1 from Rohm Semiconductor is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the HP8M51TB1 provides reliable performance in demanding environments. Choose Rohm Semiconductor for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
- Power - Max: 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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