HP8S36TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH MIDDLE POWER MOSFET,
$0.00
Available to order
Reference Price (USD)
2,500+
$0.58800
Exquisite packaging
Discount
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Discover the high-performance HP8S36TB from Rohm Semiconductor, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the HP8S36TB delivers unmatched performance. Trust Rohm Semiconductor's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A, 80A
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
- Power - Max: 29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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