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HS3J

Taiwan Semiconductor Corporation
HS3J Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
$0.22
Available to order
Reference Price (USD)
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$0.21585
500+
$0.2136915
1000+
$0.211533
1500+
$0.2093745
2000+
$0.207216
2500+
$0.2050575
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C

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