HSG2001VF-01TL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
NPN HIGH FREQPOWER AMP
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the HSG2001VF-01TL-E, a high-performance RF Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The HSG2001VF-01TL-E features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Renesas Electronics America Inc for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Analog Devices Inc./Maxim Integrated
MAX2601ESA+T
Infineon Technologies
BFP405H6740XTSA1
Infineon Technologies
BF799WH6327XTSA1
Infineon Technologies
BFR193WH6327XTSA1
Toshiba Semiconductor and Storage
2SC4915-O,LF
Central Semiconductor Corp
2N5770 PBFREE
NXP USA Inc.
BFU520WX
onsemi
2SC5490A-TL-H
NXP USA Inc.
ON5087,115
Diodes Incorporated