Shopping cart

Subtotal: $0.00

HT12G

Taiwan Semiconductor Corporation
HT12G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 100V TS-1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

SFF1005GHC0G

Taiwan Semiconductor Corporation

SFT14G A1G

Taiwan Semiconductor Corporation

ES2A M4G

Panjit International Inc.

S5M-AU_R1_000A1

Taiwan Semiconductor Corporation

SK59BHR5G

Taiwan Semiconductor Corporation

SS14LHMTG

Vishay General Semiconductor - Diodes Division

VS-30WQ06FNTRPBF

Vishay General Semiconductor - Diodes Division

8TQ100STRL

Taiwan Semiconductor Corporation

MUR305SHR7G

Infineon Technologies

D400N22BVFXPSA1

Top