HVC355BTRF
Renesas Electronics America Inc
Renesas Electronics America Inc
VARIABLE CAPACITANCE DIODE
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
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HVC355BTRF Variable Capacitance Diodes by Renesas Electronics America Inc represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, HVC355BTRF is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Obsolete
- Capacitance @ Vr, F: 2.95pF @ 4V, 1MHz
- Capacitance Ratio: 2.2
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 15 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: 2-UFP
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