HVU350BTRF-E
Renesas Electronics America Inc
Renesas Electronics America Inc
VARIABLE CAPACITANCE DIODE
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
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HVU350BTRF-E Variable Capacitance Diodes by Renesas Electronics America Inc represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, HVU350BTRF-E is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: -
- Capacitance Ratio: -
- Capacitance Ratio Condition: -
- Voltage - Peak Reverse (Max): -
- Diode Type: -
- Q @ Vr, F: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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