IAUA180N10S5N029AUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-HSOF-5
$2.76
Available to order
Reference Price (USD)
1+
$2.75780
500+
$2.730222
1000+
$2.702644
1500+
$2.675066
2000+
$2.647488
2500+
$2.61991
Exquisite packaging
Discount
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Optimize your power electronics with the IAUA180N10S5N029AUMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IAUA180N10S5N029AUMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 221W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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