IAUA210N10S5N024AUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-HSOF-5
$2.99
Available to order
Reference Price (USD)
1+
$2.99360
500+
$2.963664
1000+
$2.933728
1500+
$2.903792
2000+
$2.873856
2500+
$2.84392
Exquisite packaging
Discount
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Upgrade your designs with the IAUA210N10S5N024AUMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IAUA210N10S5N024AUMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 238W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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