IAUA250N04S6N007EAUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V)
$3.73
Available to order
Reference Price (USD)
1+
$3.73000
500+
$3.6927
1000+
$3.6554
1500+
$3.6181
2000+
$3.5808
2500+
$3.5435
Exquisite packaging
Discount
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Meet the IAUA250N04S6N007EAUMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IAUA250N04S6N007EAUMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.7Ohm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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