IAUA250N04S6N008AUMA1
Infineon Technologies
Infineon Technologies
OPTIMOS POWER MOSFET
$3.41
Available to order
Reference Price (USD)
1+
$3.41000
500+
$3.3759
1000+
$3.3418
1500+
$3.3077
2000+
$3.2736
2500+
$3.2395
Exquisite packaging
Discount
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The IAUA250N04S6N008AUMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IAUA250N04S6N008AUMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 172W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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