IAUZ18N10S5L420ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 18A TSDSON-8-32
$0.55
Available to order
Reference Price (USD)
1+
$0.54960
500+
$0.544104
1000+
$0.538608
1500+
$0.533112
2000+
$0.527616
2500+
$0.52212
Exquisite packaging
Discount
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The IAUZ18N10S5L420ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IAUZ18N10S5L420ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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