IDB09E60ATMA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO263
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the IDB09E60ATMA1 single rectifier diode by Infineon Technologies. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The IDB09E60ATMA1 is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Infineon Technologies's IDB09E60ATMA1 for advanced semiconductor solutions.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 19.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 9 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Toshiba Semiconductor and Storage
CRS20I30A(TE85L,QM
Rohm Semiconductor
RBR5LAM30BTR
Central Semiconductor Corp
CMDSH05-4 TR PBFREE
Taiwan Semiconductor Corporation
RB751V-40WS RRG
Vishay General Semiconductor - Diodes Division
ES3D-E3/57T
Vishay General Semiconductor - Diodes Division
MSQ1PJHM3/H
Vishay General Semiconductor - Diodes Division
1N5818-E3/53
Vishay General Semiconductor - Diodes Division
RS3B-E3/9AT
Central Semiconductor Corp
CMR1-02M BK PBFREE
Nexperia USA Inc.