IDB12E120ATMA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO263-3
$0.32
Available to order
Reference Price (USD)
1+
$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
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The IDB12E120ATMA1 by Infineon Technologies is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The IDB12E120ATMA1 is also used in smart home devices and wearable technology, ensuring seamless operation. Infineon Technologies's expertise in semiconductor technology guarantees that the IDB12E120ATMA1 delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 28A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 150°C
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