IDB30E60ATMA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO263
$1.49
Available to order
Reference Price (USD)
1,000+
$1.37373
Exquisite packaging
Discount
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The IDB30E60ATMA1 from Infineon Technologies is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Infineon Technologies's IDB30E60ATMA1 for superior performance and durability in demanding environments.
Specifications
- Product Status: Last Time Buy
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 52.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 126 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -40°C ~ 175°C
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Infineon Technologies