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IDK10G120C5XTMA1

Infineon Technologies
IDK10G120C5XTMA1 Preview
Infineon Technologies
SIC DISCRETE
$6.24
Available to order
Reference Price (USD)
1+
$6.24000
500+
$6.1776
1000+
$6.1152
1500+
$6.0528
2000+
$5.9904
2500+
$5.928
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 31.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 525pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C

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