Shopping cart

Subtotal: $0.00

IDM02G120C5XTMA1

Infineon Technologies
IDM02G120C5XTMA1 Preview
Infineon Technologies
DIODE SCHOTTKY 1200V 2A TO252-2
$2.69
Available to order
Reference Price (USD)
2,500+
$1.42110
5,000+
$1.36768
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 182pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Taiwan Semiconductor Corporation

SF2006G

Vishay General Semiconductor - Diodes Division

SE20PABHM3/I

Vishay General Semiconductor - Diodes Division

UF5403-E3/73

Taiwan Semiconductor Corporation

SK110B R5G

Panjit International Inc.

SD360YS_S2_00001

Rectron USA

FM1800W

Vishay General Semiconductor - Diodes Division

BYM10-100HE3/97

Vishay General Semiconductor - Diodes Division

VS-8EWH06FN-M3

Yangzhou Yangjie Electronic Technology Co.,Ltd

ES1J-F1-0000HF

Vishay General Semiconductor - Diodes Division

SGL41-30HE3/97

Top