IDW10G65C5XKSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247-3
$5.74
Available to order
Reference Price (USD)
1+
$5.38000
10+
$4.86400
240+
$4.05017
720+
$3.50132
1,200+
$3.00923
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IDW10G65C5XKSA1 by Infineon Technologies is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The IDW10G65C5XKSA1 is also used in smart home devices and wearable technology, ensuring seamless operation. Infineon Technologies's expertise in semiconductor technology guarantees that the IDW10G65C5XKSA1 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 180 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Panjit International Inc.
S3DA_R1_00001
Vishay General Semiconductor - Diodes Division
1N4007-E3/54
Vishay General Semiconductor - Diodes Division
VS-10TQ045STRRHM3
Vishay General Semiconductor - Diodes Division
S3G-M3/9AT
Renesas Electronics America Inc
1N4749AT9-E
STMicroelectronics
STPS2H100ZFY
Vishay General Semiconductor - Diodes Division
V12P6HM3_A/H
SMC Diode Solutions
124NQ040-1
Taiwan Semiconductor Corporation
ES1DLWHRVG
Comchip Technology