IGTM10N50A
Harris Corporation
Harris Corporation
N CHANNEL IGBT FOR SWITCHING APP
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
Discount
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Upgrade your power management systems with the IGTM10N50A Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGTM10N50A provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGTM10N50A for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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