IGW30N60H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 60A 187W TO247-3
$3.52
Available to order
Reference Price (USD)
240+
$2.68613
Exquisite packaging
Discount
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Upgrade your power management systems with the IGW30N60H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGW30N60H3FKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGW30N60H3FKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 1.38mJ
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 21ns/207ns
- Test Condition: 400V, 30A, 10.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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