IGW50N60H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 100A TO247-3
$5.88
Available to order
Reference Price (USD)
1+
$5.88000
10+
$5.31100
240+
$4.41950
720+
$3.81807
1,200+
$3.27883
Exquisite packaging
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Upgrade your power management systems with the IGW50N60H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGW50N60H3FKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGW50N60H3FKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 2.36mJ
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 23ns/235ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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