IHW30N160R5XKSA1
Infineon Technologies
Infineon Technologies
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$5.13
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Reference Price (USD)
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$5.58000
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$5.04000
240+
$4.19396
720+
$3.62322
1,200+
$3.11150
Exquisite packaging
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Discover the IHW30N160R5XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IHW30N160R5XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IHW30N160R5XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
- Power - Max: 263 W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 205 nC
- Td (on/off) @ 25°C: -/290ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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