IJW120R100T1FKSA1
Infineon Technologies

Infineon Technologies
JFET N-CHAN 26A TO247-3
$18.60
Available to order
Reference Price (USD)
1+
$18.60000
500+
$18.414
1000+
$18.228
1500+
$18.042
2000+
$17.856
2500+
$17.67
Exquisite packaging
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The IJW120R100T1FKSA1 JFET by Infineon Technologies is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The IJW120R100T1FKSA1 performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 1.2 V
- Drain to Source Voltage (Vdss): 1.2 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1.2 V
- Current Drain (Id) - Max: 26 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
- Resistance - RDS(On): 100 mOhms
- Power - Max: 190 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3