IKW30N65NL5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 85A TO247-3
$2.36
Available to order
Reference Price (USD)
240+
$4.25225
Exquisite packaging
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Optimize your power systems with the IKW30N65NL5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKW30N65NL5XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
- Power - Max: 227 W
- Switching Energy: 560µJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 59ns/283ns
- Test Condition: 400V, 30A, 23Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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