IMB1AT110
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS DUAL PNP SMT6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08694
Exquisite packaging
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Discover the versatility of Rohm Semiconductor's IMB1AT110, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The IMB1AT110 is widely used in IoT devices, medical equipment, and renewable energy systems. Rohm Semiconductor's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the IMB1AT110 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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