IMH2AT110
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS DUAL NPN SMT6
$0.41
Available to order
Reference Price (USD)
3,000+
$0.08200
6,000+
$0.07380
15,000+
$0.06560
30,000+
$0.06150
75,000+
$0.05740
Exquisite packaging
Discount
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Upgrade your electronic designs with the IMH2AT110 by Rohm Semiconductor, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the IMH2AT110 excels in automotive systems, power management modules, and communication devices. Rohm Semiconductor's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose IMH2AT110 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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