IMT4T108
Rohm Semiconductor
Rohm Semiconductor
TRANS 2PNP 120V 0.05A 6SMT
$0.39
Available to order
Reference Price (USD)
3,000+
$0.09810
6,000+
$0.09265
15,000+
$0.08448
30,000+
$0.07903
75,000+
$0.07630
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IMT4T108 BJT Array from Rohm Semiconductor brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The IMT4T108 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
Related Products
Microchip Technology
JANSF2N3810
Intersil
CA3083M
NXP USA Inc.
BCM847DS/DG/B2115
NXP USA Inc.
PBSS4230PANP,115
onsemi
NSS40301MDR2G
Nexperia USA Inc.
BC847RAPNZ
Sanken
SMA4036
Nexperia USA Inc.
BC847DS,115
STMicroelectronics
ULQ2003A
Fairchild Semiconductor