IMZ120R030M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 56A TO247-4
$30.40
Available to order
Reference Price (USD)
1+
$30.40000
500+
$30.096
1000+
$29.792
1500+
$29.488
2000+
$29.184
2500+
$28.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IMZ120R030M1HXKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IMZ120R030M1HXKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
Related Products
onsemi
NVTFS6H860NLTAG
Nexperia USA Inc.
PMZB950UPELYL
Infineon Technologies
IRFH7085TRPBF
Rohm Semiconductor
RD3G400GNTL
IXYS
IXTK120P20T
IXYS
IXFX26N100P
Vishay Siliconix
SI2301BDS-T1-GE3
Nexperia USA Inc.
PSMN4R5-30YLC,115
onsemi
NTD15N06LT4
Taiwan Semiconductor Corporation