IMZ120R045M1XKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1200V 52A TO247-4
$23.59
Available to order
Reference Price (USD)
1+
$23.59000
500+
$23.3541
1000+
$23.1182
1500+
$22.8823
2000+
$22.6464
2500+
$22.4105
Exquisite packaging
Discount
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The IMZ120R045M1XKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IMZ120R045M1XKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
- FET Feature: Current Sensing
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
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