IPA057N08N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 60A TO220-FP
$2.93
Available to order
Reference Price (USD)
1+
$2.29000
10+
$2.08500
100+
$1.69890
500+
$1.34830
1,000+
$1.13794
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPA057N08N3GXKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPA057N08N3GXKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
JDX5012
Vishay Siliconix
IRFS9N60ATRRPBF
Renesas Electronics America Inc
RJL5013DPP-00#T2
Vishay Siliconix
SQS160ELNW-T1_GE3
Inventchip
IV1Q12050T3
onsemi
NTD6416ANT4G
Infineon Technologies
SPI20N60CFDXKSA1
Infineon Technologies
BSC025N03LSGATMA1
onsemi
BSS138LT1G
onsemi