IPA65R190C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220
$1.37
Available to order
Reference Price (USD)
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$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
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Discover the IPA65R190C6XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPA65R190C6XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-111
- Package / Case: TO-220-3 Full Pack
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