IPA65R660CFDXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 6A TO220
$1.34
Available to order
Reference Price (USD)
1+
$1.33952
500+
$1.3261248
1000+
$1.3127296
1500+
$1.2993344
2000+
$1.2859392
2500+
$1.272544
Exquisite packaging
Discount
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Upgrade your designs with the IPA65R660CFDXKSA2 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPA65R660CFDXKSA2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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