IPA80R310CEXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 16.7A TO220-FP
$4.24
Available to order
Reference Price (USD)
1+
$3.42000
10+
$3.07700
100+
$2.55840
500+
$2.10954
1,000+
$1.81028
Exquisite packaging
Discount
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Upgrade your designs with the IPA80R310CEXKSA2 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPA80R310CEXKSA2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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