IPB017N06N3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 180A TO263-7
$4.20
Available to order
Reference Price (USD)
1,000+
$2.58612
2,000+
$2.45682
Exquisite packaging
Discount
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Optimize your power electronics with the IPB017N06N3GATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPB017N06N3GATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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