IPB180N03S4L01ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 180A TO263-7
$1.62
Available to order
Reference Price (USD)
1,000+
$1.37090
Exquisite packaging
Discount
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Enhance your electronic projects with the IPB180N03S4L01ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPB180N03S4L01ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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