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IPB180N04S4L01ATMA1

Infineon Technologies
IPB180N04S4L01ATMA1 Preview
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
$2.58
Available to order
Reference Price (USD)
1,000+
$1.37314
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
  • Vgs (Max): +20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 19100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

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