IPB60R099P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31A D2PAK
$5.77
Available to order
Reference Price (USD)
1,000+
$2.54778
2,000+
$2.42039
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPB60R099P7ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPB60R099P7ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 530µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 117W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPSA70R900P7SAKMA1
onsemi
NTMS5P02R2
Micro Commercial Co
MCQ4435-TP
onsemi
FDD9507L-F085
onsemi
FQA140N10
Nexperia USA Inc.
BUK9Y19-55B,115
STMicroelectronics
STQ2HNK60ZR-AP
Fairchild Semiconductor
HUF75631S3ST
Vishay Siliconix
SI2306BDS-T1-BE3
onsemi