IPB65R125C7ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 18A TO263-3
$4.08
Available to order
Reference Price (USD)
1,000+
$2.46354
2,000+
$2.34036
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB65R125C7ATMA2 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPB65R125C7ATMA2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 101W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDMS7670
Taiwan Semiconductor Corporation
TSM056NH04CV RGG
onsemi
FQT2P25TF
onsemi
FCB36N60NTM
Infineon Technologies
AUIRF1404S
Alpha & Omega Semiconductor Inc.
AOT12N30L
Alpha & Omega Semiconductor Inc.
AON1605
Toshiba Semiconductor and Storage
TPH2R306NH,L1Q
onsemi
NTBLS1D7N08H
Diodes Incorporated