IPB65R190CFDAATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 17.5A D2PAK
$3.94
Available to order
Reference Price (USD)
1,000+
$2.12150
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB65R190CFDAATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPB65R190CFDAATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IMW120R350M1HXKSA1
Fairchild Semiconductor
NDB4060
Micro Commercial Co
BSS123K-TP
Toshiba Semiconductor and Storage
SSM3K62TU,LXHF
Renesas Electronics America Inc
UPA1803GR-9JG-E1-A
Infineon Technologies
IPA65R099C6XKSA1
Vishay Siliconix
SI4420BDY-T1-E3
Vishay Siliconix
SQJ402EP-T1_GE3
Renesas Electronics America Inc
NP75P04YLG-E1-AY
Fairchild Semiconductor