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IPB65R310CFDATMA2

Infineon Technologies
IPB65R310CFDATMA2 Preview
Infineon Technologies
MOSFET N-CH 650V 11.4A TO263-3
$2.02
Available to order
Reference Price (USD)
1,000+
$1.29163
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 104.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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