IPB80N06S208ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$2.24
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Reference Price (USD)
1,000+
$0.98108
Exquisite packaging
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Discover the IPB80N06S208ATMA2 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPB80N06S208ATMA2 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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