IPB80P04P407ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
$1.52
Available to order
Reference Price (USD)
1,000+
$0.81664
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB80P04P407ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPB80P04P407ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
SSM3J64CTC,L3F
onsemi
NTMFS4825NFET1G
Vishay Siliconix
IRF840PBF-BE3
Diodes Incorporated
ZVN4206AVSTZ
Vishay Siliconix
SQM85N15-19_GE3
Vishay Siliconix
TP0610K-T1-E3
Rohm Semiconductor
RRH040P03TB1
Vishay Siliconix
SQJ416EP-T1_BE3
Texas Instruments
CSD19533Q5A
onsemi