IPBE65R230CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11A TO263-7
$6.14
Available to order
Reference Price (USD)
1+
$6.14000
500+
$6.0786
1000+
$6.0172
1500+
$5.9558
2000+
$5.8944
2500+
$5.833
Exquisite packaging
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Optimize your power electronics with the IPBE65R230CFD7AATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPBE65R230CFD7AATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3-10
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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